TS3DDR4000 Texas instruments

TS3DDR4000

Уточнить цену

TS3DDR4000

Уточнить цену

СРАВНИТЬ

В СРАВНЕНИИ

Уточнить цену

Описание

The TS3DDR4000 is 1:2 or 2:1 high speed DDR2/DDR3/DDR4 switch that offers 12-bit wide bus switching. The A port can be switched to the B or C port for all bits simultaneously. Designed for operation in DDR2, DDR3 and DDR4 memory bus systems, the TS3DDR4000 uses a proprietary architecture that delivers high bandwidth (single-ended –3dB bandwidth at 5.6 GHz), low insertion loss at low frequency, and very low propagation delay. The TS3DDR4000 is 1.8 V logic compatible, and all switches are bi-directional for added design flexibility. The TS3DDR4000 also offers a low-power mode, in which all channels become high-Z and the device consumes minimal power.

Wide V_DD Range: 2.375 V – 3.6 V
High Bandwidth: 5.6 GHz Typical (single-ended); 6.0 GHz Typical (differential)
Low Switch On-Resistance (R_ON): 8 Ω Typical
Low Bit-to-Bit Skew: 3ps Typical; 6ps Max across All Channels
Low Crosstalk: –34 dB Typical at 1067 MHz
Low Operating Current: 40 µA Typical
Low-Power Mode with Low Current Consumption: 2 µA Typical
I_OFF Protection Prevents Current Leakage in Powered Down State (V_DD = 0 V)
Supports POD_12, SSTL_12, SSTL_15 and SSTL_18 Signaling
ESD Performance:
- 3-kV Human Body Model (A114B, Class II)
- 1-kV Charged Device Model (C101)
8 mm x 3 mm 48-balls 0.65-mm Pitch ZBA Package

Protocols	DDR2, DDR3, DDR4, MIPI
Configuration	2:1 SPDT
Number of channels	12
Supply voltage (max) (V)	3.6
Supply voltage (min) (V)	2.375
Ron (typ) (mΩ)	8300
Input/ouput voltage (min) (V)	0
Input/ouput voltage (max) (V)	3.3
Supply current (typ) (µA)	40
ESD HBM (typ) (kV)	3
Operating temperature range (°C)	-40 to 85
Crosstalk (dB)	-68
COFF (typ) (pF)	1
CON (typ) (pF)	0.5
Off isolation (typ) (dB)	-34
OFF-state leakage current (max) (µA)	5
Ron (max) (mΩ)	11200
Ron channel match (max) (Ω)	1
RON flatness (typ) (Ω)	0.6
Turnoff time (disable) (max) (ns)	65
Turnon time (enable) (max) (ns)	65
VIH (min) (V)	1.4
VIL (max) (V)	0.5