This device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
- Dual P-Channel MOSFETs
- Common Source Configuration
- Small Footprint 1 mm × 1.5 mm
- Gate-Source Voltage Clamp
- Gate ESD Protection –3 kV
- Pb Free
- RoHS Compliant
- Halogen Free
| VDS (V) | -20 |
| VGS (V) | -6 |
| Configuration | Dual Common Source |
| Rds(on) at VGS=4.5 V (max) (mΩ) | 108 |
| Rds(on) at VGS=2.5 V (max) (mΩ) | 150 |
| Rds(on) at VGS=1.8 V (max) (mΩ) | 285 |
| Id peak (max) (A) | -22 |
| Id max cont (A) | -1.6 |
| QG (typ) (nC) | 1.9 |
| QGD (typ) (nC) | 0.23 |
| QGS (typ) (nC) | 0.48 |
| VGSTH typ (typ) (V) | -0.8 |
| ID - silicon limited at TC=25°C (A) | 1.6 |
| Logic level | Yes |
| Operating temperature range (°C) | -55 to 150 |
| Rating | Catalog |