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CSD75208W1015 Texas instruments

CSD75208W1015
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CSD75208W1015
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This device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
  • Dual P-Channel MOSFETs
  • Common Source Configuration
  • Small Footprint 1 mm × 1.5 mm
  • Gate-Source Voltage Clamp
  • Gate ESD Protection –3 kV
  • Pb Free
  • RoHS Compliant
  • Halogen Free
VDS (V) -20
VGS (V) -6
Configuration Dual Common Source
Rds(on) at VGS=4.5 V (max) (mΩ) 108
Rds(on) at VGS=2.5 V (max) (mΩ) 150
Rds(on) at VGS=1.8 V (max) (mΩ) 285
Id peak (max) (A) -22
Id max cont (A) -1.6
QG (typ) (nC) 1.9
QGD (typ) (nC) 0.23
QGS (typ) (nC) 0.48
VGSTH typ (typ) (V) -0.8
ID - silicon limited at TC=25°C (A) 1.6
Logic level Yes
Operating temperature range (°C) -55 to 150
Rating Catalog
CSD75208W1015