CSD75207W15 Texas instruments

CSD75207W15

Уточнить цену

CSD75207W15

Уточнить цену

СРАВНИТЬ

В СРАВНЕНИИ

Уточнить цену

Описание

The CSD75207W15 device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery-operated space-constrained applications. The device has also been awarded with U.S. patents 7952145, 7420247, 7235845, and 6600182.

Dual P-Channel MOSFETs
Common Source Configuration
Small Footprint 1.5-mm × 1.5-mm
Gate-Source Voltage Clamp
Gate ESD Protection >4 kV
- HBM JEDEC standard JESD22-A114
Pb and Halogen Free
RoHS Compliant

VDS (V)	-20
VGS (V)	-6
Configuration	Dual Common Source
Rds(on) at VGS=4.5 V (max) (mΩ)	27
Rds(on) at VGS=2.5 V (max) (mΩ)	39
Rds(on) at VGS=1.8 V (max) (mΩ)	81
Id peak (max) (A)	-24
Id max cont (A)	-3.9
QG (typ) (nC)	2.9
QGD (typ) (nC)	0.4
QGS (typ) (nC)	0.7
VGSTH typ (typ) (V)	-0.8
ID - silicon limited at TC=25°C (A)	3.9
Logic level	Yes
Operating temperature range (°C)	-55 to 150
Rating	Catalog