CSD25501F3 Texas instruments

CSD25501F3

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CSD25501F3

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Описание

This –20-V, 64-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10-kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6 V, depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6 V.

VDS (V)	-20
VGS (V)	-20
Configuration	Single
Rds(on) at VGS=4.5 V (max) (mΩ)	76
Rds(on) at VGS=2.5 V (max) (mΩ)	125
Rds(on) at VGS=1.8 V (max) (mΩ)	260
Id peak (max) (A)	-13.6
Id max cont (A)	-3.6
QG (typ) (nC)	1.02
QGD (typ) (nC)	0.09
QGS (typ) (nC)	0.45
VGSTH typ (typ) (V)	-0.75
ID - silicon limited at TC=25°C (A)	3.6
Logic level	Yes
Operating temperature range (°C)	-55 to 150
Rating	Catalog