CSD25485F5 Texas instruments

CSD25485F5

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CSD25485F5

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Описание

This 29.7-mΩ, –20-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size. . . . . . . . .

Low-on resistance
Low Q_g and Q_gd
Ultra-small footprint
- 1.53 mm × 0.77 mm
- 0.50-mm pad pitch
Low profile
- 0.36-mm height
Integrated ESD protection diode
- Rated > 4-kV HBM
- Rated > 2-kV CDM
Lead and halogen free
RoHS compliant

VDS (V)	-20
VGS (V)	-12
Configuration	Single
Rds(on) at VGS=4.5 V (max) (mΩ)	42
Rds(on) at VGS=2.5 V (max) (mΩ)	70
Rds(on) at VGS=1.8 V (max) (mΩ)	250
Id peak (max) (A)	-31
Id max cont (A)	-5.3
QG (typ) (nC)	2.7
QGD (typ) (nC)	0.56
QGS (typ) (nC)	0.67
VGSTH typ (typ) (V)	-0.95
ID - silicon limited at TC=25°C (A)	3.2
Logic level	Yes
Operating temperature range (°C)	-55 to 150
Rating	Catalog