CSD25484F4 Texas instruments

CSD25484F4

Уточнить цену

CSD25484F4

Уточнить цену

СРАВНИТЬ

В СРАВНЕНИИ

Уточнить цену

Описание

This 80-mΩ, –20-V, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . . . .

Low on-resistance
Ultra-low Q_g and Q_gd
Low-threshold voltage
Ultra-small footprint (0402 case size)
- 1.0 mm × 0.6 mm
Ultra-low profile
- 0.2-mm height
Integrated ESD protection diode
- Rated > 4-kV HBM
- Rated > 2-kV CDM
Lead and halogen free
RoHS compliant

VDS (V)	-20
VGS (V)	-12
Configuration	Single
Rds(on) at VGS=4.5 V (max) (mΩ)	109
Rds(on) at VGS=2.5 V (max) (mΩ)	180
Rds(on) at VGS=1.8 V (max) (mΩ)	825
Id peak (max) (A)	-22
Id max cont (A)	-2.5
QG (typ) (nC)	1.09
QGD (typ) (nC)	0.15
QGS (typ) (nC)	0.35
VGSTH typ (typ) (V)	-0.95
ID - silicon limited at TC=25°C (A)	2.5
Logic level	Yes
Operating temperature range (°C)	-55 to 150
Rating	Catalog