CSD25481F4 Texas instruments

CSD25481F4

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CSD25481F4

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Описание

This 90-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . .

Ultra-low on resistance
Ultra-low Q_g and Q_gd
High operating drain current
Ultra-small footprint (0402 Case Size)
- 1 mm × 0.6 mm
Ultra-low profile
- 0.36 mm max height
Integrated ESD protection diode
- Rated >4 kV HBM
- Rated >2 kV CDM
Lead and halogen free
RoHS compliant

VDS (V)	-20
VGS (V)	-12
Configuration	Single
Rds(on) at VGS=4.5 V (max) (mΩ)	105
Rds(on) at VGS=2.5 V (max) (mΩ)	175
Rds(on) at VGS=1.8 V (max) (mΩ)	800
Id peak (max) (A)	-10
Id max cont (A)	-2.5
QG (typ) (nC)	0.913
QGD (typ) (nC)	0.153
QGS (typ) (nC)	0.24
VGSTH typ (typ) (V)	-0.95
ID - silicon limited at TC=25°C (A)	2.5
Logic level	Yes
Operating temperature range (°C)	-55 to 150
Rating	Catalog