CSD25480F3 Texas instruments

CSD25480F3

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CSD25480F3

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Описание

This –20-V, 110-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

Low on-resistance
Ultra-low Q_g and Q_gd
Ultra-small footprint
- 0.73 mm × 0.64 mm
Low profile
- 0.36-mm max height
Integrated ESD protection diode
Lead and halogen free
RoHS compliant

VDS (V)	-20
VGS (V)	-12
Configuration	Single
Rds(on) at VGS=4.5 V (max) (mΩ)	159
Rds(on) at VGS=2.5 V (max) (mΩ)	260
Rds(on) at VGS=1.8 V (max) (mΩ)	840
Id peak (max) (A)	-10.4
Id max cont (A)	-1.7
QG (typ) (nC)	0.7
QGD (typ) (nC)	0.1
QGS (typ) (nC)	0.26
VGSTH typ (typ) (V)	-0.95
ID - silicon limited at TC=25°C (A)	1.7
Logic level	Yes
Operating temperature range (°C)	-55 to 150
Rating	Catalog