This -20 V, 5.5 mΩ NexFET power MOSFET is designed to
minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package
that offers an excellent thermal performance for the size of the device.
- Ultra-Low Qg and Qgd
- Low Thermal Resistance
- Low RDS(on)
- Halogen Free
- RoHS Compliant
- Pb Free Terminal Plating
- SON 3.3 mm × 3.3 mm Plastic Package
| VDS (V) | -20 |
| VGS (V) | -12 |
| Configuration | Single |
| Rds(on) at VGS=4.5 V (max) (mΩ) | 6.5 |
| Rds(on) at VGS=2.5 V (max) (mΩ) | 12.1 |
| Rds(on) at VGS=1.8 V (max) (mΩ) | 150 |
| Id peak (max) (A) | -240 |
| Id max cont (A) | -18 |
| QG (typ) (nC) | 10.8 |
| QGD (typ) (nC) | 2.2 |
| QGS (typ) (nC) | 2.8 |
| VGSTH typ (typ) (V) | -0.9 |
| ID - silicon limited at TC=25°C (A) | -104 |
| Logic level | Yes |
| Operating temperature range (°C) | -55 to 150 |
| Rating | Catalog |