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CSD25404Q3 Texas instruments

CSD25404Q3
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CSD25404Q3
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This -20 V, 5.5 mΩ NexFET power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Low RDS(on)
  • Halogen Free
  • RoHS Compliant
  • Pb Free Terminal Plating
  • SON 3.3 mm × 3.3 mm Plastic Package
VDS (V) -20
VGS (V) -12
Configuration Single
Rds(on) at VGS=4.5 V (max) (mΩ) 6.5
Rds(on) at VGS=2.5 V (max) (mΩ) 12.1
Rds(on) at VGS=1.8 V (max) (mΩ) 150
Id peak (max) (A) -240
Id max cont (A) -18
QG (typ) (nC) 10.8
QGD (typ) (nC) 2.2
QGS (typ) (nC) 2.8
VGSTH typ (typ) (V) -0.9
ID - silicon limited at TC=25°C (A) -104
Logic level Yes
Operating temperature range (°C) -55 to 150
Rating Catalog
CSD25404Q3