CSD25310Q2 Texas instruments

CSD25310Q2

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CSD25310Q2

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Описание

This 19.9 mΩ, –20 V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2 mm × 2 mm plastic package make the device ideal for battery operated space constrained operations. For all available packages, see the orderable addendum at the end of the data sheet.

VDS (V)	-20
VGS (V)	-8
Configuration	Single
Rds(on) at VGS=4.5 V (max) (mΩ)	23.9
Rds(on) at VGS=2.5 V (max) (mΩ)	32.5
Rds(on) at VGS=1.8 V (max) (mΩ)	89
Id peak (max) (A)	-48
Id max cont (A)	-9.6
QG (typ) (nC)	3.6
QGD (typ) (nC)	0.5
QGS (typ) (nC)	1.1
VGSTH typ (typ) (V)	-0.85
ID - silicon limited at TC=25°C (A)	9.6
Logic level	Yes
Operating temperature range (°C)	-55 to 150
Rating	Catalog