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CSD25211W1015 Texas instruments

CSD25211W1015
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CSD25211W1015
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The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.
  • Ultra-low on resistance
  • Ultra-low Qg and Qgd
  • Small footprint 1.0 mm × 1.5 mm
  • Low profile 0.62 mm height
  • Pb Free
  • Gate-source voltage clamp
  • Gate ESD protection – 3 kV
  • RoHS compliant
  • Halogen free
VDS (V) -20
VGS (V) -6
Configuration Single
Rds(on) at VGS=4.5 V (max) (mΩ) 33
Rds(on) at VGS=2.5 V (max) (mΩ) 44
Id peak (max) (A) -9.5
Id max cont (A) -3.2
QG (typ) (nC) 3.4
QGD (typ) (nC) 0.2
QGS (typ) (nC) 1.1
VGSTH typ (typ) (V) -0.8
ID - silicon limited at TC=25°C (A) 3.2
Logic level Yes
Operating temperature range (°C) -55 to 150
Rating Catalog
CSD25211W1015