This 21 mΩ, 20 V device is designed to deliver the lowest on resistance and gate charge
in a small 1.5 mm × 1.5 mm chip scale package with excellent thermal characteristics in an
ultra-low profile. Low on resistance coupled with the small footprint and low profile make the
device ideal for battery operated space constrained applications.
- Low-Resistance
- Small Footprint 1.5 mm × 1.5 mm
- Gate ESD Protection –3 kV
- Pb Free
- RoHS Compliant
- Halogen Free
- Gate-Source Voltage Clamp
| VDS (V) | -20 |
| VGS (V) | -6 |
| Configuration | Single |
| Rds(on) at VGS=4.5 V (max) (mΩ) | 26 |
| Rds(on) at VGS=2.5 V (max) (mΩ) | 32 |
| Rds(on) at VGS=1.8 V (max) (mΩ) | 52 |
| Id peak (max) (A) | -38 |
| Id max cont (A) | -4 |
| QG (typ) (nC) | 5.8 |
| QGD (typ) (nC) | 0.8 |
| QGS (typ) (nC) | 1.1 |
| VGSTH typ (typ) (V) | -0.75 |
| ID - silicon limited at TC=25°C (A) | 4 |
| Logic level | Yes |
| Operating temperature range (°C) | -55 to 150 |
| Rating | Catalog |