CSD23382F4 Texas instruments

CSD23382F4

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CSD23382F4

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Описание

This 66-mΩ, 12-V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . .

Low on-resistance
Ultra-low Q_g and Q_gd
Ultra-small footprint (0402 case size)
- 1.0 mm × 0.6 mm
Low profile
- 0.36-mm maximum height
Integrated ESD protection diode
- Rated > 2-kV HBM
- Rated > 2-kV CDM
Pb terminal plating
Halogen free
RoHS compliant

VDS (V)	-12
VGS (V)	-8
Configuration	Single
Rds(on) at VGS=4.5 V (max) (mΩ)	76
Rds(on) at VGS=2.5 V (max) (mΩ)	105
Rds(on) at VGS=1.8 V (max) (mΩ)	199
Id peak (max) (A)	-22
Id max cont (A)	-3.5
QG (typ) (nC)	1.04
QGD (typ) (nC)	0.15
QGS (typ) (nC)	0.5
VGSTH typ (typ) (V)	-0.8
ID - silicon limited at TC=25°C (A)	3.5
Logic level	Yes
Operating temperature range (°C)	-55 to 150, 0 to 0
Rating	Catalog