CSD23381F4 Texas instruments

CSD23381F4

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CSD23381F4

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Описание

This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.. . . . .

Ultra-low on-resistance
Ultra-low Q_g and Q_gd
High operating drain current
Ultra-small footprint (0402 case size)
- 1.0 mm × 0.6 mm
Ultra-low profile
- Maximum height: 0.36 mm
Integrated ESD protection diode
- Rated > 4-kV HBM
- Rated > 2-kV CDM
Lead and halogen free
RoHS compliant

VDS (V)	-12
VGS (V)	-8
Configuration	Single
Rds(on) at VGS=4.5 V (max) (mΩ)	175
Rds(on) at VGS=2.5 V (max) (mΩ)	300
Rds(on) at VGS=1.8 V (max) (mΩ)	970
Id peak (max) (A)	-9
Id max cont (A)	-2.3
QG (typ) (nC)	1.14
QGD (typ) (nC)	0.19
QGS (typ) (nC)	0.3
VGSTH typ (typ) (V)	-0.95
ID - silicon limited at TC=25°C (A)	2.3
Logic level	Yes
Operating temperature range (°C)	-55 to 150
Rating	Catalog