CSD23285F5 Texas instruments

CSD23285F5

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CSD23285F5

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Описание

This 29-mΩ, –12-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.

Low on-resistance
Low Q_g and Q_gd
Ultra-small footprint
- 1.53 mm × 0.77 mm
- 0.50-mm pad pitch
Low profile
- 0.36-mm height
Integrated ESD protection diode
- Rated > 4 kV HBM
- Rated > 2 kV CDM
Lead and halogen free
RoHS compliant

VDS (V)	-12
VGS (V)	-6
Configuration	Single
Rds(on) at VGS=4.5 V (max) (mΩ)	35
Rds(on) at VGS=2.5 V (max) (mΩ)	47
Rds(on) at VGS=1.8 V (max) (mΩ)	80
Id peak (max) (A)	-31
Id max cont (A)	-3.3
QG (typ) (nC)	3.2
QGD (typ) (nC)	0.48
QGS (typ) (nC)	0.66
VGSTH typ (typ) (V)	-0.65
ID - silicon limited at TC=25°C (A)	3.3
Logic level	Yes
Operating temperature range (°C)	-55 to 150
Rating	Catalog