CSD23280F3 Texas instruments

CSD23280F3

Уточнить цену

CSD23280F3

Уточнить цену

СРАВНИТЬ

В СРАВНЕНИИ

Уточнить цену

Описание

This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

Low On-Resistance
Ultra-Low Q_g and Q_gd
High-operating drain current
Ultra-small footprint
- 0.73 mm × 0.64 mm
Ultra-low profile
- 0.36-mm max height
Integrated ESD protection diode
- Rated > 4-kV HBM
- Rated > 2-kV CDM
Lead and halogen free
RoHS compliant

VDS (V)	-12
VGS (V)	-6
Configuration	Single
Rds(on) at VGS=4.5 V (max) (mΩ)	116
Rds(on) at VGS=2.5 V (max) (mΩ)	165
Rds(on) at VGS=1.8 V (max) (mΩ)	250
Id peak (max) (A)	-11.4
Id max cont (A)	-1.8
QG (typ) (nC)	0.95
QGD (typ) (nC)	0.068
QGS (typ) (nC)	0.3
VGSTH typ (typ) (V)	-0.65
ID - silicon limited at TC=25°C (A)	1.8
Logic level	Yes
Operating temperature range (°C)	-55 to 150
Rating	Catalog