This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and
gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low
profile.
- Ultra-Low Qg and Qgd
- Low RDS(on)
- Small Footprint
- Low Profile 0.62-mm Height
- Lead Free
- RoHS Compliant
- Halogen Free
- CSP 1-mm × 1.5-mm Wafer Level Package
| VDS (V) | -8 |
| VGS (V) | -6 |
| Configuration | Single |
| Rds(on) at VGS=4.5 V (max) (mΩ) | 19.4 |
| Rds(on) at VGS=2.5 V (max) (mΩ) | 26.5 |
| Rds(on) at VGS=1.8 V (max) (mΩ) | 53 |
| Id peak (max) (A) | -54 |
| Id max cont (A) | -3 |
| QG (typ) (nC) | 4.9 |
| QGD (typ) (nC) | 0.6 |
| QGS (typ) (nC) | 1.3 |
| VGSTH typ (typ) (V) | -0.8 |
| ID - silicon limited at TC=25°C (A) | 3 |
| Logic level | Yes |
| Operating temperature range (°C) | -55 to 150 |
| Rating | Catalog |