This –8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
- Ultra-Low Resistance
- Small Footprint 1.5 mm × 1.5 mm
- Lead Free
- Gate ESD Protection
- RoHS Compliant
- Halogen Free
- Gate-Source Voltage Clamp
| VDS (V) | -8 |
| VGS (V) | -6 |
| Configuration | Single |
| Rds(on) at VGS=4.5 V (max) (mΩ) | 5.7 |
| Rds(on) at VGS=2.5 V (max) (mΩ) | 9.1 |
| Id peak (max) (A) | -108 |
| Id max cont (A) | -5 |
| QG (typ) (nC) | 11.2 |
| QGD (typ) (nC) | 1.8 |
| QGS (typ) (nC) | 2.1 |
| VGSTH typ (typ) (V) | -0.7 |
| ID - silicon limited at TC=25°C (A) | 5 |
| Logic level | Yes |
| Operating temperature range (°C) | -55 to 150 |
| Rating | Catalog |