This –8-V, 8.2-mΩ, 1.2-mm × 1.2-mm Land Grid Array (LGA) NexFET™ device has been designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. The Land Grid Array (LGA) package is a silicon chip scale package with metal pads instead of solder balls.
- Low resistance
- Small footprint 1.2 mm × 1.2 mm
- Low profile 0.36-mm height
- Lead free
- Gate-source voltage clamp
- Gate ESD protection
- RoHS compliant
- Halogen free
| VDS (V) | -8 |
| VGS (V) | -6 |
| Configuration | Single |
| Rds(on) at VGS=4.5 V (max) (mΩ) | 9.9 |
| Rds(on) at VGS=2.5 V (max) (mΩ) | 15 |
| Rds(on) at VGS=1.8 V (max) (mΩ) | 40 |
| Id peak (max) (A) | -71 |
| Id max cont (A) | -7.4 |
| QG (typ) (nC) | 6.5 |
| QGD (typ) (nC) | 1 |
| QGS (typ) (nC) | 1.2 |
| VGSTH typ (typ) (V) | -0.7 |
| ID - silicon limited at TC=25°C (A) | 7.4 |
| Logic level | Yes |
| Operating temperature range (°C) | -55 to 150 |
| Rating | Catalog |