ONET8551T Texas instruments

ONET8551T

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ONET8551T

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Описание

The ONET8551T device is a high-speed, high-gain, limiting transimpedance amplifier used in optical receivers with data rates up to 11.3 Gbps. It features low-input referred noise, 9-GHz bandwidth, 10-kΩ small signal transimpedance, and a received signal strength indicator (RSSI. The ONET8551T device is available in die form, includes an on-chip VCC bypass capacitor, and is optimized for packaging in a TO can. The ONET8551T device requires a single +3.3-V supply. The power-efficient design typically dissipates less than 95 mW. The device is characterized for operation from –40°C to 100°C case (IC back-side) temperature.

9-GHz Bandwidth
10-kΩ Differential Small Signal
Transimpedance
–20-dBm Sensitivity
0.9-µA_RMS Input Referred Noise
2.5-mA_p-p Input Overload Current
Received Signal Strength Indication
(RSSI)
92-mW Typical Power Dissipation
CML Data Outputs With On-Chip
50-Ω Back-Termination
On Chip Supply Filter Capacitor
Single +3.3-V Supply
Die Size: 870 µm x 1036 µm

Type	Transimpedance and limiting amplifier
Data rate (max) (MBits)	11300
Supply current (typ) (µA)	28000
Supply current (max) (µA)	40000
Deterministic jitter (typ) (ps)	6
Operating temperature range (°C)	-40 to 100