SN74AUP1G00 Texas instruments

SN74AUP1G00

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SN74AUP1G00

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Описание

This single 2-input positive-NAND gate performs the Boolean function Y = A × B or Y = A + B in positive logic.

ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
Available in the Ultra Small 0.64 mm² Package (DPW) with 0.5-mm Pitch
Low Static-Power Consumption (I_CC = 0.9 µA Max)
Low Dynamic-Power Consumption (C_pd = 4 pF Typical at 3.3 V)
Low Input Capacitance (C_i = 1.5 pF Typical)
Low Noise Overshoot and Undershoot <10% of V_CC
I_off Supports Live Insertion, Partial-Power-Down Mode, and Back-Drive Protection
Input Hysteresis Allows Slow Input Transition and Better Switching Noise Immunity at Input (V_hys = 250 mV Typical at 3.3 V)
Wide Operating V_CC Range of 0.8 V to 3.6 V
Optimized for 3.3-V Operation
3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation
t_pd = 4.8 ns Maximum at 3.3 V
Suitable for Point-to-Point Applications
Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II

Technology family	AUP
Supply voltage (min) (V)	0.8
Supply voltage (max) (V)	3.6
Number of channels	1
Inputs per channel	1
IOL (max) (mA)	4
IOH (max) (mA)	-4
Input type	Standard CMOS
Output type	Push-Pull
Features	Over-voltage tolerant inputs, Partial power down (Ioff), Very high speed (tpd 5-10ns)
Data rate (max) (MBits)	100
Rating	Catalog
Operating temperature range (°C)	-40 to 85