CSD87502Q2 Texas instruments

CSD87502Q2

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CSD87502Q2

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Описание

The CSD87502Q2 is a 30 V, 27 mΩ N-Channel device with dual independent MOSFETs in a SON 2 x 2 mm plastic package. The two FETs were designed to be used in a half-bridge configuration for synchronous buck and other power supply applications. Additionally, these NexFET power MOSFETs can be used for adaptor, USB input protection, and battery charging applications. The dual FETs feature low drain-to-source on-resistance that minimizes losses and offers low component count for space-constrained applications.

Low On-Resistance
Dual Independent MOSFETs
Space Saving SON 2 × 2 mm Plastic Package
Optimized for 5 V Gate Driver
Avalanche Rated
Pb and Halogen Free
RoHS Compliant

VDS (V)	30
Configuration	Dual
Rds(on) at VGS=4.5 V (max) (mΩ)	42
Rds(on) at VGS=10 V (max) (mΩ)	32.4
IDM - pulsed drain current (max) (A)	23
QG (typ) (nC)	2.2
QGD (typ) (nC)	0.5
QGS (typ) (nC)	1
VGS (V)	20
VGSTH typ (typ) (V)	1.6
ID - silicon limited at TC=25°C (A)	5
ID - package limited (A)	5
Logic level	Yes
Operating temperature range (°C)	-55 to 150
Rating	Catalog