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CSD85302L Texas instruments

CSD85302L
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CSD85302L
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This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual NexFET power MOSFET is designed to minimize resistance in the smallest footprint. Its small footprint and common drain configuration make the device ideal for battery-powered applications in small handheld devices.
  • Common Drain Configuration
  • Low On-Resistance
  • Small Footprint of 1.35 mm × 1.35 mm
  • Pb Free and Halogen Free
  • RoHS Compliant
  • ESD HBM Protection >2.5 kV
VDS (V) 20
Configuration Dual Common Drain
Rds(on) at VGS=4.5 V (max) (mΩ) 24
IDM - pulsed drain current (max) (A) 37
QG (typ) (nC) 6
QGD (typ) (nC) 1.4
QGS (typ) (nC) 1.2
VGS (V) 10
VGSTH typ (typ) (V) 0.9
ID - silicon limited at TC=25°C (A) 7
ID - package limited (A) 7
Logic level Yes
Operating temperature range (°C) -55 to 150
Rating Catalog
CSD85302L