This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual NexFET power MOSFET is designed to minimize resistance in
the smallest footprint. Its small footprint and common drain configuration make the device ideal
for battery-powered applications in small handheld devices.
- Common Drain Configuration
- Low On-Resistance
- Small Footprint of 1.35 mm × 1.35 mm
- Pb Free and Halogen Free
- RoHS Compliant
- ESD HBM Protection >2.5 kV
| VDS (V) | 20 |
| Configuration | Dual Common Drain |
| Rds(on) at VGS=4.5 V (max) (mΩ) | 24 |
| IDM - pulsed drain current (max) (A) | 37 |
| QG (typ) (nC) | 6 |
| QGD (typ) (nC) | 1.4 |
| QGS (typ) (nC) | 1.2 |
| VGS (V) | 10 |
| VGSTH typ (typ) (V) | 0.9 |
| ID - silicon limited at TC=25°C (A) | 7 |
| ID - package limited (A) | 7 |
| Logic level | Yes |
| Operating temperature range (°C) | -55 to 150 |
| Rating | Catalog |