This 100-V, 49-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications.
- Ultra-Low Qg and Qgd
- Low-Thermal Resistance
- Avalanche Rated
- Lead Free
- RoHS Compliant
- Halogen Free
- SON 3.3-mm × 3.3-mm Plastic Package
| VDS (V) | 100 |
| Configuration | Single |
| Rds(on) at VGS=10 V (max) (mΩ) | 61 |
| IDM - pulsed drain current (max) (A) | 36 |
| QG (typ) (nC) | 4.3 |
| QGD (typ) (nC) | 0.8 |
| QGS (typ) (nC) | 1.6 |
| VGS (V) | 20 |
| VGSTH typ (typ) (V) | 3.2 |
| ID - silicon limited at TC=25°C (A) | 13.7 |
| ID - package limited (A) | 15 |
| Logic level | No |
| Operating temperature range (°C) | -55 to 150 |
| Rating | Catalog |