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CSD19538Q3A Texas instruments

CSD19538Q3A
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CSD19538Q3A
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This 100-V, 49-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications.
  • Ultra-Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package
VDS (V) 100
Configuration Single
Rds(on) at VGS=10 V (max) (mΩ) 61
IDM - pulsed drain current (max) (A) 36
QG (typ) (nC) 4.3
QGD (typ) (nC) 0.8
QGS (typ) (nC) 1.6
VGS (V) 20
VGSTH typ (typ) (V) 3.2
ID - silicon limited at TC=25°C (A) 13.7
ID - package limited (A) 15
Logic level No
Operating temperature range (°C) -55 to 150
Rating Catalog
CSD19538Q3A