This 100 V, 4.6 mΩ, D2PAK (TO-263)
NexFET™ power MOSFET is designed to minimize losses in power
conversion applications.
- Ultra-Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb-Free Terminal Plating
- RoHS Compliant
- Halogen Free
- D2PAK Plastic Package
| VDS (V) | 100 |
| Configuration | Single |
| Rds(on) at VGS=10 V (max) (mΩ) | 5.6 |
| IDM - pulsed drain current (max) (A) | 400 |
| QG (typ) (nC) | 44 |
| QGD (typ) (nC) | 5.6 |
| QGS (typ) (nC) | 17 |
| VGS (V) | 20 |
| VGSTH typ (typ) (V) | 2.6 |
| ID - silicon limited at TC=25°C (A) | 136 |
| ID - package limited (A) | 200 |
| Logic level | No |
| Operating temperature range (°C) | -55 to 175 |
| Rating | Catalog |