This 54-mΩ, 60-V, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many space constrained industrial load switch applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.
- Low on-resistance
- Ultra-low Qg and Qgd
- Ultra-small footprint
- Low profile
- Integrated ESD protection diode
- Lead and halogen free
- RoHS compliant
| VDS (V) | 60 |
| Configuration | Single |
| Rds(on) at VGS=4.5 V (max) (mΩ) | 75 |
| Rds(on) at VGS=10 V (max) (mΩ) | 65 |
| IDM - pulsed drain current (max) (A) | 21 |
| QG (typ) (nC) | 11 |
| QGD (typ) (nC) | 1.6 |
| QGS (typ) (nC) | 1.5 |
| VGS (V) | 20 |
| VGSTH typ (typ) (V) | 1.75 |
| ID - silicon limited at TC=25°C (A) | 2.2 |
| ID - package limited (A) | 2.2 |
| Logic level | Yes |
| Operating temperature range (°C) | -55 to 150 |
| Rating | Catalog |