CSD17585F5 Texas instruments

CSD17585F5

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CSD17585F5

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Описание

This 30-V, 22-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size. . . . . . .

Low-on resistance
Ultra-low Q_g and Q_gd
Ultra-small footprint
- 1.53 mm × 0.77 mm
Low profile
- 0.36-mm height
Integrated ESD protection diode
- Rated > 4-kV HBM
- Rated > 2-kV CDM
Lead and halogen free
RoHS compliant

VDS (V)	30
Configuration	Single
Rds(on) at VGS=4.5 V (max) (mΩ)	33
Rds(on) at VGS=10 V (max) (mΩ)	27
IDM - pulsed drain current (max) (A)	34
QG (typ) (nC)	1.9
QGD (typ) (nC)	0.39
QGS (typ) (nC)	0.53
VGS (V)	20
VGSTH typ (typ) (V)	1.3
ID - silicon limited at TC=25°C (A)	5.9
ID - package limited (A)	5.9
Logic level	Yes
Operating temperature range (°C)	-55 to 150
Rating	Catalog