This 30-V, 3.2-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion
applications.
- Low Qg and Qgd
- Low RDS(on)
- Low Thermal Resistance
- Avalanche Rated
- Lead-Free
- RoHS Compliant
- Halogen Free
- SON 3.3-mm × 3.3-mm Plastic Package
| VDS (V) | 30 |
| Configuration | Single |
| Rds(on) at VGS=4.5 V (max) (mΩ) | 4.7 |
| Rds(on) at VGS=10 V (max) (mΩ) | 3.8 |
| IDM - pulsed drain current (max) (A) | 154 |
| QG (typ) (nC) | 20 |
| QGD (typ) (nC) | 4 |
| QGS (typ) (nC) | 6.9 |
| VGS (V) | 20 |
| VGSTH typ (typ) (V) | 1.3 |
| ID - silicon limited at TC=25°C (A) | 101 |
| ID - package limited (A) | 60 |
| Logic level | Yes |
| Operating temperature range (°C) | -55 to 150 |
| Rating | Catalog |