CSD17382F4 Texas instruments

CSD17382F4

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CSD17382F4

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Описание

This 30-V, 54-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . . . .

Low on-resistance
Low Q_g and Q_gd
Low threshold voltage
Ultra-small footprint (0402 case size)
- 1.0 mm × 0.6 mm
Ultra-low profile
- 0.36-mm height
Integrated ESD protection diode
- Rated > 3-kV HBM
- Rated > 2-kV CDM
Lead and halogen free
RoHS compliant

VDS (V)	30
Configuration	Single
Rds(on) at VGS=4.5 V (max) (mΩ)	67
IDM - pulsed drain current (max) (A)	14.8
QG (typ) (nC)	2.1
QGD (typ) (nC)	0.63
QGS (typ) (nC)	0.41
VGS (V)	10
VGSTH typ (typ) (V)	0.9
ID - silicon limited at TC=25°C (A)	2.3
ID - package limited (A)	2.3
Logic level	Yes
Operating temperature range (°C)	-55 to 150
Rating	Catalog