CSD15380F3 Texas instruments

CSD15380F3

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CSD15380F3

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Описание

This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultra-low capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

Ultra-low C_iSS and C_OSS
Ultra-low Q_g and Q_gd
Ultra-small footprint
- 0.73 mm × 0.64 mm
Ultra-low profile
- 0.36-mm max height
Integrated ESD protection diode
- Rated > 4-kV HBM
- Rated > 2-kV CDM
Lead and halogen free
RoHS compliant

VDS (V)	20
Configuration	Single
Rds(on) at VGS=4.5 V (max) (mΩ)	1460
IDM - pulsed drain current (max) (A)	1.6
QG (typ) (nC)	0.216
QGD (typ) (nC)	0.027
QGS (typ) (nC)	0.077
VGS (V)	10
VGSTH typ (typ) (V)	1.1
ID - silicon limited at TC=25°C (A)	0.5
ID - package limited (A)	0.5
Logic level	Yes
Operating temperature range (°C)	-55 to 150
Rating	Catalog