CSD13385F5 Texas instruments

CSD13385F5

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CSD13385F5

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Описание

This 12-V, 15-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size. . . . .

Low on resistance
Low Q_g and Q_gd
Ultra-small footprint
- 1.53 mm × 0.77 mm
Low profile
- 0.36-mm height
Integrated ESD protection diode
- Rated > 4-kV HBM
- Rated > 2-kV CDM
Lead and halogen free
RoHS compliant

VDS (V)	12
Configuration	Single
Rds(on) at VGS=4.5 V (max) (mΩ)	19
IDM - pulsed drain current (max) (A)	41
QG (typ) (nC)	3.9
QGD (typ) (nC)	0.39
QGS (typ) (nC)	0.74
VGS (V)	8
VGSTH typ (typ) (V)	0.8
ID - silicon limited at TC=25°C (A)	7.1
ID - package limited (A)	7.1
Logic level	Yes
Operating temperature range (°C)	-55 to 150
Rating	Catalog