CSD13380F3 Texas instruments

CSD13380F3

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CSD13380F3

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Описание

This 63-mΩ, 12-V N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. . .

Low on resistance
Ultra-low Q_g and Q_gd
High operating drain current
Ultra-small footprint
- 0.73 mm × 0.64 mm
Low profile
- 0.36-mm max height
Integrated ESD protection diode
- Rated > 3-kV HBM
- Rated > 2-kV CDM
Lead and halogen free
RoHS compliant

VDS (V)	12
Configuration	Single
Rds(on) at VGS=4.5 V (max) (mΩ)	76
IDM - pulsed drain current (max) (A)	13.5
QG (typ) (nC)	0.91
QGD (typ) (nC)	0.15
QGS (typ) (nC)	0.19
VGS (V)	8
VGSTH typ (typ) (V)	0.85
ID - silicon limited at TC=25°C (A)	3.6
ID - package limited (A)	3.6
Logic level	Yes
Operating temperature range (°C)	-55 to 150
Rating	Catalog