LMG1025-Q1 Texas instruments

LMG1025-Q1

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LMG1025-Q1

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Описание

The LMG1025-Q1 is a single channel low-side enhancement-mode GaN FET and logic-level MOSFET driver for high switching frequency automotive applications. Narrow pulse width capability, fast switching specification, and small pulse distortion combine to significantly enhance LiDAR, ToF, and Power Converter performance. 1.25-ns output pulse width enables more powerful, eye-safe diode pulses. This, combined with 300-ns distortion, leads to longer-range, precise LiDAR/ToF systems. 2.9-ns propagation delay significantly improves the control loop response time and thus overall performance of the power converters. Split output allows the drive strength and timing to be independently adjusted through external resistors between OUTH, OUTL, and the FET gate. The driver features undervoltage lockout (UVLO) and over-temperature protection (OTP) to ensure the device is not damaged in overload or fault conditions. LMG1025-Q1 is available in a compact, leadless, AEC-Q100 automotive qualified package to meet the size and gate loop inductance requirements of high switching frequency automotive applications.

AEC-Q100 grade 1 qualified
1.25-ns typical minimum input pulse width
2.6-ns typical rising propagation delay
2.9-ns typical falling propagation delay
300-ps typical pulse distortion
Independent 7-A pull-up and 5-A pull-down current
650-ps typical rise time (220-pF load)
850-ps typical fall time (220-pF load)
2-mm x 2-mm QFN package
Inverting and non-inverting inputs
UVLO and over-temperature protection
Single 5-V supply voltage

Number of channels	1
Power switch	GaNFET, MOSFET
Peak output current (A)	7
Input VCC (min) (V)	4.75
Input VCC (max) (V)	5.25
Features	1.25-ns Pulse Width
Operating temperature range (°C)	-40 to 125
Rise time (ns)	0.65
Fall time (ns)	0.85
Propagation delay time (µs)	0.0029
Input threshold	CMOS, TTL
Channel input logic	TTL
Input negative voltage (V)	0
Rating	Automotive
Undervoltage lockout (typ) (V)	4.19
Driver configuration	Dual inputs