LMG1020 Texas instruments

LMG1020

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LMG1020

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Описание

The LMG1020 device is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low side drivers. The design simplicity of the LMG1020 enables extremely fast propagation delays of 2.5 nanoseconds and minimum pulse width of 1 nanosecond. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively. The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in the event of overload or fault conditions. 0.8-mm × 1.2-mm WCSP package of LMG1020 minimizes gate loop inductance and maximizes power density in high-frequency applications.

Low-Side, Ultra-Fast Gate Driver for GaN and Silicon FETs
1 ns Minimum Input Pulse Width
Up to 60 MHz Operation
2.5 ns Typical, 4.5 ns Maximum Propagation Delay
400 ps Typical Rise and Fall Time
7-A Peak Source and 5-A Peak Sink Currents
5-V Supply Voltage
UVLO and Overtemperature Protection
0.8 mm × 1.2 mm WCSP Package

Number of channels	1
Power switch	GaNFET, MOSFET
Peak output current (A)	7
Input VCC (min) (V)	4.75
Input VCC (max) (V)	5.25
Features	low-side, ultra-fast
Operating temperature range (°C)	-40 to 125
Rise time (ns)	0.4
Fall time (ns)	0.4
Propagation delay time (µs)	0.0025
Input threshold	TTL
Channel input logic	Inverting, Non-inverting
Input negative voltage (V)	0
Rating	Catalog
Undervoltage lockout (typ) (V)	3.5
Driver configuration	Low Side