UCC21710-Q1 Texas instruments

UCC21710-Q1

Уточнить цену

UCC21710-Q1

Уточнить цену

СРАВНИТЬ

В СРАВНЕНИИ

Уточнить цену

Описание

The UCC21710-Q1 is a galvanic isolated single channel gate driver designed for up to 1700-V SiC MOSFETs and IGBTs with advanced protection features, best-in-class dynamic performance and robustness. UCC21710-Q1 has up to ±10-A peak source and sink current.The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage, 12.8-kV PK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).The UCC21710 -Q1 includes the state-of-the-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers versatility and simplifying the system design effort, size and cost.

5.7-kV RMS single channel isolated gate driver
AEC-Q100 qualified for automotive applications
- Device temperature grade 0: -40°C to +150°C ambient operating temperature range
- Device HBM ESD classification level 3A
- Device CDM ESD classification level C6
SiC MOSFETs and IGBTs up to 2121V pk
33-V maximum output drive voltage (VDD-VEE)
±10-A drive strength and split output
150-V/ns minimum CMTI
270ns response time fast overcurrent protection
4-A internal active miller clamp
400mA soft turn-off when fault happens
Isolated analog sensor with PWM output for
- Temperature sensing with NTC, PTC or thermal diode
- High voltage DC-Link or phase voltage
Alarm FLT on over current and reset from RST/EN
Fast enable/disable response on RST/EN
Reject <40ns noise transient and pulse on input pins
12V VDD UVLO with power good on RDY
Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
SOIC-16 DW package with creepage and clearance distance > 8mm
Operating junction temperature –40°C to 150°C
Safety-related certifications:
- Reinforced insulation per DIN EN IEC 60747-17(VDE 0884-17)
- UL 1577 component recognition program

Number of channels	1
Isolation rating	Reinforced
Withstand isolation voltage (VISO) (Vrms)	5700
Transient isolation voltage (VIOTM) (VPK)	8400
Power switch	IGBT, SiCFET
Peak output current (A)	10
Features	Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Short circuit protection, Soft turnoff
Output VCC/VDD (max) (V)	33
Output VCC/VDD (min) (V)	13
Input VCC (min) (V)	3
Input VCC (max) (V)	5.5
TI functional safety category	Functional Safety Quality-Managed
Propagation delay time (µs)	0.09
Input threshold	CMOS
Operating temperature range (°C)	-40 to 125
Rating	Automotive
Bus voltage (max) (V)	2121
Rise time (ns)	33
Fall time (ns)	27
Undervoltage lockout (typ) (V)	12