LM74670-Q1 Texas instruments

LM74670-Q1

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LM74670-Q1

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Описание

The LM74670-Q1 is a controller device that can be used with an N-Channel MOSFET in full or half bridge rectifier architectures for alternators. It is designed to drive an external MOSFET to emulate an ideal diode. A unique advantage of this scheme is that it is not ground referenced, thus it has zero IQ. The schottky diodes in full or half bridge rectifiers and alternators can be replaced with the LM74670-Q1 solution to avoid forward conduction diode losses and produce more efficient AC-DC converters. The LM74670-Q1 controller provides a gate drive for external N-Channel MOSFET and a fast response internal comparator to pull-down the MOSFET Gate in the event of reverse polarity. This device can support an AC signal frequency up to 300Hz.

AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
- Exceeds HBM ESD Classification Level 2
- Device CDM ESD Classification Level C4B
Peak Input AC Voltage: 42 V
Zero I_Q
Charge Pump Gate Driver for external N-Channel MOSFET
Low Forward-Voltage Drop and Less Power Dissipation Compared to Schottky Diode
Capable of handling AC signal up to 300-Hz Frequency

Vin (min) (V)	0.48
Vin (max) (V)	42
Number of channels	1
Features	Automotive load dump compatibility, Linear control, Reverse current blocking, Reverse polarity protection
Iq (typ) (mA)	0
Iq (max) (mA)	0
FET	External single FET
IGate source (typ) (µA)	70
IGate source (max) (µA)	67
IGate sink (typ) (mA)	0.07
IGate pulsed (typ) (A)	0.1
Operating temperature range (°C)	-40 to 125
IReverse (typ) (µA)	110
VSense reverse (typ) (mV)	20
Design support	EVM, Reference Design, Simulation Model
Rating	Automotive
Imax (A)	250
VGS (max) (V)	2.5
Device type	Ideal diode controller
Product type	Ideal diode controller