OPA657-DIE Texas instruments

OPA657-DIE

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OPA657-DIE

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Описание

The OPA657 device combines a high gain-bandwidth, low-distortion, voltage-feedback operational amplifier with a low voltage noise JFET-input stage to offer a very high dynamic range amplifier for high-precision analog-to-digital converter (ADC) driving or wideband transimpedance applications. Photodiode applications achieve improved noise and bandwidth using this decompensated, high gain-bandwidth amplifier. Very low level signals can be significantly amplified in a single OPA657 gain stage with exceptional bandwidth and accuracy. The very low input bias current and capacitance supports this performance even for relatively high source impedance. Broadband photodetector applications benefit from the low voltage noise JFET inputs for the OPA657. The JFET input contributes virtually no current noise, which makes the device ideal for high-gain photodiode applications.

Architecture	FET / CMOS Input, Voltage FB
Number of channels	1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)	8
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)	12
GBW (typ) (MHz)	1600
BW at Acl (MHz)	350
Acl, min spec gain (V/V)	7
Slew rate (typ) (V/µs)	700
Vn at flatband (typ) (nV√Hz)	4.8
Vn at 1 kHz (typ) (nV√Hz)	7
Iq per channel (typ) (mA)	14
Vos (offset voltage at 25°C) (max) (mV)	1.8
Rail-to-rail	No
Features	Decompensated
Rating	Catalog
Operating temperature range (°C)	-40 to 85
CMRR (typ) (dB)	89
Input bias current (max) (pA)	20
Offset drift (typ) (µV/°C)	2
Iout (typ) (mA)	70
2nd harmonic (dBc)	74
3rd harmonic (dBc)	106
Frequency of harmonic distortion measurement (MHz)	5