LMG1205 Texas instruments

LMG1205

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LMG1205

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Описание

The LMG1205 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14 V regardless of the VDD voltage. The LMG1205 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.In addition, the strong sink capability of the LMG1205 maintains the gate in the low state, preventing unintended turnon during switching. The LMG1205 can operate up to several MHz. The LMG1205 is available in a 12-pin DSBGA package that offers a compact footprint and minimized package inductance.

Independent high-side and low-side TTL logic inputs
1.2-A peak source, 5-A sink current
High-side floating bias voltage rail operates up to 100 VDC
Internal bootstrap supply voltage clamping
Split outputs for adjustable turnon, turnoff strength
0.6-Ω pulldown, 2.1-Ω pullup resistance
Fast propagation times (35 ns typical)
Excellent propagation delay matching (1.5 ns typical)
Supply rail undervoltage lockout
Low power consumption

Power switch	GaNFET, MOSFET
Input VCC (min) (V)	4.5
Input VCC (max) (V)	5.5
Peak output current (A)	5
Operating temperature range (°C)	-40 to 125
Undervoltage lockout (typ) (V)	4
Rating	Catalog
Propagation delay time (µs)	0.035
Rise time (ns)	7
Fall time (ns)	3.5
Iq (mA)	0.09
Input threshold	TTL
Channel input logic	TTL
Negative voltage handling at HS pin (V)	-5
Features	Bootstrap supply voltage clamp, Split outputs on high and low side
Driver configuration	Half bridge