LM5113-Q1 Texas instruments

LM5113-Q1

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LM5113-Q1

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Описание

The LM5113-Q1 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge configuration for automotive applications. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.In addition, the strong sink capability of the LM5113-Q1 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113-Q1 can operate up to several MHz. The LM5113-Q1 is available in a standard 10-pin WSON package with an exposed pad to aid power dissipation.

Qualified for Automotive Applications
AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range
- Device HBM ESD Classification Level 1C
- Device CDM ESD Classification Level C6
Independent High-Side and Low-Side
TTL Logic Inputs
1.2-A Peak Source, 5-A Peak Sink Output Current
High-Side Floating Bias Voltage Rail
Operates up to 100-VDC
Internal Bootstrap Supply Voltage Clamping
Split Outputs for Adjustable
Turnon and Turnoff Strength
0.6-Ω Pulldown, 2.1-Ω Pullup Resistance
Fast Propagation Times (28 ns Typical)
Excellent Propagation Delay Matching
(1.5 ns Typical)
Supply Rail Undervoltage Lockout
Low Power Consumption

Bus voltage (max) (V)	100
Power switch	GaNFET, MOSFET
Input VCC (min) (V)	4.5
Input VCC (max) (V)	5.5
Peak output current (A)	5
Operating temperature range (°C)	-40 to 125
Undervoltage lockout (typ) (V)	4
Rating	Automotive
Propagation delay time (µs)	0.03
Rise time (ns)	7
Fall time (ns)	3.5
Iq (mA)	0.15
Input threshold	TTL
Channel input logic	TTL
Negative voltage handling at HS pin (V)	-5
Features	Bootstrap supply voltage clamp, Split outputs on high and low side
Driver configuration	Half bridge