LM5109B Texas instruments

LM5109B

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LM5109B

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Описание

The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages.

Drives Both a High-Side and Low-Side N-Channel MOSFET
1-A Peak Output Current (1.0-A Sink and 1.0-A Source)
Inputs Compatible With Independent TTL and CMOS
Bootstrap Supply Voltage to 108-V DC
Fast Propagation Times (30 ns Typical)
Drives 1000-pF Load With 15-ns Rise and Fall Times
Excellent Propagation Delay Matching (2 ns Typical)
Supply Rail Undervoltage Lockout
Low Power Consumption
8-Pin SOIC and Thermally-Enhanced 8-Pin WSON Package

Bus voltage (max) (V)	90
Power switch	MOSFET
Input VCC (min) (V)	8
Input VCC (max) (V)	14
Peak output current (A)	1
Operating temperature range (°C)	-40 to 125
Undervoltage lockout (typ) (V)	8
Rating	Catalog
Propagation delay time (µs)	0.025
Rise time (ns)	15
Fall time (ns)	15
Iq (mA)	0.01
Input threshold	TTL
Channel input logic	TTL
Negative voltage handling at HS pin (V)	-1
Driver configuration	Dual, Independent