LM5105 Texas instruments

LM5105

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LM5105

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Описание

The LM5105 is a high-voltage gate driver designed to drive both the high-side and low-side N–Channel MOSFETs in a synchronous buck or half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100 V. The single control input is compatible with TTL signal levels and a single external resistor programs the switching transition dead time through tightly matched turnon delay circuits. A high-voltage diode is provided to charge the high-side gate-drive bootstrap capacitor. The robust level shift technology operates at high speed while consuming low power and provides clean output transitions. Undervoltage lockout disables the gate driver when either the low-side or the bootstrapped high-side supply voltage is below the operating threshold. The LM5105 is offered in the thermally enhanced WSON plastic package.

Drives Both a High-Side and Low-Side N-Channel MOSFET
1.8-A Peak Gate Drive Current
Bootstrap Supply Voltage Range up to 118-V DC
Integrated Bootstrap Diode
Single TTL Compatible Input
Programmable Turnon Delays (Dead Time)
Enable Input Pin
Fast Turnoff Propagation Delays (26 ns Typical)
Drives 1000 pF With 15-ns Rise and Fall Time
Supply Rail Undervoltage Lockout
Low Power Consumption
Package: Thermally Enhanced 10-Pin WSON
(4 mm × 4 mm)

Bus voltage (max) (V)	100
Power switch	MOSFET
Input VCC (min) (V)	8
Input VCC (max) (V)	14
Peak output current (A)	1.8
Operating temperature range (°C)	-40 to 125
Undervoltage lockout (typ) (V)	8
Rating	Catalog
Propagation delay time (µs)	0.026
Rise time (ns)	10
Fall time (ns)	10
Iq (mA)	0.01
Input threshold	TTL
Channel input logic	TTL
Negative voltage handling at HS pin (V)	-1
Driver configuration	Dual, Single