LM25101 Texas instruments

LM25101

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LM25101

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Описание

The LM25101 high-voltage gate driver is designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The A version provides a full 3-A of gate drive while the B and C versions provide 2-A and 1-A, respectively. The outputs are independently controlled with TTL input thresholds. An integrated high voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard 8-pin SOIC, 8-pin SO-PowerPAD, 8-pin WSON, 10-pin WSON, and 8-pin MSOP PowerPAD packages.

Independent High and Low Driver Logic Inputs
Bootstrap Supply Voltage up to 100-V DC
Drives Both a High-Side and Low-Side N-Channel MOSFETs
Fast Propagation Times (25 ns Typical)
Drives 1000-pF Load With 8-ns Rise and Fall Times
Excellent Propagation Delay Matching (3 ns Typical)
Supply Rail Undervoltage Lockout
Low Power Consumption
Pin Compatible With HIP2100 and HIP2101

Bus voltage (max) (V)	100
Power switch	MOSFET
Input VCC (min) (V)	9
Input VCC (max) (V)	14
Peak output current (A)	3
Operating temperature range (°C)	-40 to 125
Undervoltage lockout (typ) (V)	8
Rating	Catalog
Propagation delay time (µs)	0.022
Rise time (ns)	8
Fall time (ns)	8
Iq (mA)	0.01
Input threshold	TTL
Channel input logic	TTL
Negative voltage handling at HS pin (V)	-1
Driver configuration	Dual, Noninverting