The TLV900x-Q1 family includes single (TLV9001-Q1), dual (TLV9002-Q1), and quad-channel (TLV9004-Q1) low-voltage (1.8 V to 5.5 V) operational amplifiers (op amps) with rail-to-rail input and output swing capabilities. These op amps provide a cost-effective solution for space-constrained automotive applications such as infotainment and lighting where low-voltage operation and high capacitive-load drive are required. The capacitive-load drive of the TLV900x-Q1 family is 500 pF, and the resistive open-loop output impedance makes stabilization easier with much higher capacitive loads. These op amps are designed specifically for low-voltage operation (1.8 V to 5.5 V) with performance specifications similar to the TLV600x-Q1 devices.The robust design of the TLV900x-Q1 family simplifies circuit design. The op amps feature unity-gain stability, an integrated RFI and EMI rejection filter, and no-phase reversal in overdrive conditions.
- AEC-Q100 qualified for automotive applications
- Temperature grade 1: –40°C to +125°C, T A
- Device HBM ESD classification level 2
- Device CDM ESD classification level C6
- Scalable CMOS amplifier for low-cost applications
- Rail-to-rail input and output
- Low input offset voltage: ±0.4 mV
- Unity-gain bandwidth: 1 MHz
- Low broadband noise: 27 nV/√ Hz
- Low input bias current: 5 pA
- Low quiescent current: 60 µA\/Ch
- Unity-gain stable
- Internal RFI and EMI filter
- Operational at supply voltages as low as 1.8 V
- Easier to stabilize with higher capacitive load due to resistive open-loop output impedance
- Functional Safety-Capable
| Number of channels | 2 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 5.5 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 1.8 |
| Rail-to-rail | In, Out |
| GBW (typ) (MHz) | 1 |
| Slew rate (typ) (V/µs) | 2 |
| Vos (offset voltage at 25°C) (max) (mV) | 1.5 |
| Iq per channel (typ) (mA) | 0.06 |
| Vn at 1 kHz (typ) (nV√Hz) | 30 |
| Rating | Automotive |
| Operating temperature range (°C) | -40 to 125 |
| TI functional safety category | Functional Safety-Capable |
| Offset drift (typ) (µV/°C) | 0.6 |
| Features | Cost Optimized, EMI Hardened |
| CMRR (typ) (dB) | 90 |
| Iout (typ) (A) | 0.04 |
| Architecture | CMOS |
| Input common mode headroom (to negative supply) (typ) (V) | -0.1 |
| Input common mode headroom (to positive supply) (typ) (V) | 0.1 |
| Output swing headroom (to negative supply) (typ) (V) | 0 |
| Output swing headroom (to positive supply) (typ) (V) | -0.055 |