The TPS65295 device provides a complete power solution for DDR4 memory system with the lowest total cost and minimum space. It meets the JEDEC standard for DDR4 power-up and power-down sequence requirement. The TPS65295 integrates two synchronous buck converters (VPP and VDDQ) and a 1-A sink and source tracking LDO (VTT) and a buffered low noise reference (VTTREF). The TPS65295 employs D-CAP3™ mode coupled with 600-kHz switching frequency for ease-of-use, fast transient, and support for ceramic output capacitors without an external compensation circuit.The VTTREF tracks ½ VDDQ within excellent 0.8% accuracy. The VTT, which provides both 1-A sink and source continual current capabilities, requires only 10-µF of ceramic output capacitor. The TPS65295 provides rich functions as well as excellent power supply performance. It supports flexible power state control, placing VTT at high-Z in S3 and discharging VDDQ, VTT, and VTTREF in S4/S5 state. OVP, UVP, OCP, UVLO and thermal shutdown protections are also available. The part is available in a thermally enhanced 18-pin HotRod™ VQFN package and is designed to operate under the –40°C to 125°C junction temperature range.
- Synchronous buck converter (VDDQ)
- Input voltage range: 4.5 V to 18 V
- Output voltage fixed at 1.2 V
- D-CAP3™ mode control for fast transient response
- Continual output current: 8 A
- Advanced Eco-mode™ pulse skip
- Integrated 22-mΩ and 8.6-mΩ RDS(on) internal power switch
- 600-kHz switching frequency
- Internal soft start: 1.6 ms
- Cycle-by-cycle overcurrent protection
- Latched output OV and UV protections
- Synchronous buck converter (VPP)
- Input voltage range: 3 V to 5.5 V
- Output voltage fixed at 2.5 V
- D-CAP3™ mode control for fast transient response
- Continual output current: 1 A
- Advanced Eco-mode™ pulse skip
- Integrated 150-mΩ and 120-mΩ RDS(on) internal power switch
- 580-kHz switching frequency
- Internal soft start: 1 ms
- Cycle-by-cycle overcurrent protection
- Latched output OV and UV protections
- 1-A LDO (VTT)
- 1-A continual sink and source current
- Requires only 10 µF of ceramic output capacitor
- Support high-z in S3
- ±30-mV VTT output accuracy (DC+AC)
- Buffered reference (VTTREF)
- Buffered, low noise, ±10-mA capability
- 0.8% output accuracy
- Low quiescent current: 150 µA
- Power good indicator
- Output discharge function
- Power up and power down sequencing control
- Non-latch for OT and UVLO protections
- 18-pin 3.0-mm × 3.0-mm HotRod™ VQFN package
| DDR memory type | DDR4 |
| Control mode | D-CAP3 |
| Iout VDDQ (max) (A) | 8 |
| Iout VTT (max) (A) | 1 |
| Iq (typ) (mA) | 0.15 |
| Output | VDDQ, VREF, VTT |
| Vin (min) (V) | 4.5 |
| Vin (max) (V) | 18 |
| Features | Complete Solution |
| Rating | Catalog |
| Operating temperature range (°C) | -40 to 125 |
| Regulator type | Step-Down Converter |
| Vin bias (max) (V) | 16 |
| Vin bias (min) (V) | 4.5 |
| Vout VTT (min) (V) | 0.6 |