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TPS65295 Texas instruments

TPS65295
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TPS65295
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The TPS65295 device provides a complete power solution for DDR4 memory system with the lowest total cost and minimum space. It meets the JEDEC standard for DDR4 power-up and power-down sequence requirement. The TPS65295 integrates two synchronous buck converters (VPP and VDDQ) and a 1-A sink and source tracking LDO (VTT) and a buffered low noise reference (VTTREF). The TPS65295 employs D-CAP3™ mode coupled with 600-kHz switching frequency for ease-of-use, fast transient, and support for ceramic output capacitors without an external compensation circuit.The VTTREF tracks ½ VDDQ within excellent 0.8% accuracy. The VTT, which provides both 1-A sink and source continual current capabilities, requires only 10-µF of ceramic output capacitor. The TPS65295 provides rich functions as well as excellent power supply performance. It supports flexible power state control, placing VTT at high-Z in S3 and discharging VDDQ, VTT, and VTTREF in S4/S5 state. OVP, UVP, OCP, UVLO and thermal shutdown protections are also available. The part is available in a thermally enhanced 18-pin HotRod™ VQFN package and is designed to operate under the –40°C to 125°C junction temperature range.
  • Synchronous buck converter (VDDQ)
    • Input voltage range: 4.5 V to 18 V
    • Output voltage fixed at 1.2 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 8 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 22-mΩ and 8.6-mΩ RDS(on) internal power switch
    • 600-kHz switching frequency
    • Internal soft start: 1.6 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV and UV protections
  • Synchronous buck converter (VPP)
    • Input voltage range: 3 V to 5.5 V
    • Output voltage fixed at 2.5 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 1 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 150-mΩ and 120-mΩ RDS(on) internal power switch
    • 580-kHz switching frequency
    • Internal soft start: 1 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV and UV protections
  • 1-A LDO (VTT)
    • 1-A continual sink and source current
    • Requires only 10 µF of ceramic output capacitor
    • Support high-z in S3
    • ±30-mV VTT output accuracy (DC+AC)
  • Buffered reference (VTTREF)
    • Buffered, low noise, ±10-mA capability
    • 0.8% output accuracy
  • Low quiescent current: 150 µA
  • Power good indicator
  • Output discharge function
  • Power up and power down sequencing control
  • Non-latch for OT and UVLO protections
  • 18-pin 3.0-mm × 3.0-mm HotRod™ VQFN package
DDR memory type DDR4
Control mode D-CAP3
Iout VDDQ (max) (A) 8
Iout VTT (max) (A) 1
Iq (typ) (mA) 0.15
Output VDDQ, VREF, VTT
Vin (min) (V) 4.5
Vin (max) (V) 18
Features Complete Solution
Rating Catalog
Operating temperature range (°C) -40 to 125
Regulator type Step-Down Converter
Vin bias (max) (V) 16
Vin bias (min) (V) 4.5
Vout VTT (min) (V) 0.6
TPS65295