EMB1412 Texas instruments

EMB1412

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EMB1412

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Описание

The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

Compound CMOS and Bipolar Outputs Reduce
Output Current Variation
7 A Sink/3 A Source Current
Fast Propagation Times (25 ns Typical)
Fast Rise and Fall Times (14 ns/12 ns Rise
Fall with 2 nF Load)
Inverting and Non-Inverting Inputs Provide
Either Configuration with a Single Device
Supply Rail Under-Voltage Lockout Protection
Dedicated Input Ground (IN_REF) for Split
Supply or Single Supply Operation
Thermally Enhanced 8-Pin VSSOP Package
Output Swings from V_CC to V_EE Which can
be Negative Relative to Input Ground

Device type	Cell monitor and balancer
Operating temperature range (°C)	-40 to 125
Rating	Catalog