BQ2204A Texas instruments

BQ2204A

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BQ2204A

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Описание

The CMOS bq2204A SRAM Non-volatile Controller Unit provides all necessary functions for converting up to four banks of standard CMOS SRAM into nonvolatile read/write memory. A precision comparator monitors the 5V VCC input for an out-of-tolerance condi-tion. When out-of-tolerance is detected, the four conditioned chip-enable outputs are forced inactive to write-protect up to four banks of SRAM. During a power failure, the external SRAMs are switched from the VCC supply to one of two 3V backup sup-plies. On a subsequent power-up, the SRAMs are write-protected until a power-valid condition exists. During power-valid operation, a two-input decoder transparently selects one of up to four banks of SRAM.

Power monitoring and switching for 3-volt battery-backup applications
Write-protect control
2-input decoder for control of up to 4 banks of SRAM
3-volt primary cell inputs
Less than 10ns chip-enable propagation delay
5% or 10% supply operation

Vin (max) (V)	5.5
Device type	Memory device
Operating temperature range (°C)	-40 to 85, 0 to 70
Rating	Catalog
Communication interface	No interface
Operating current (typ) (µA)	3000