BQ2201 Texas instruments

BQ2201

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BQ2201

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Описание

The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory. A precision comparator monitors the 5V VCC input for an out-of-tolerance condition. When out of tolerance is detected, a conditioned chip-enable output is forced inactive to write-protect any standard CMOS SRAM. During a power failure, the external SRAM is switched from the VCC supply to one of two 3V backup supplies. On a subsequent power-up, the SRAM is write-protected until a power-valid condition exists. The bq2201 is footprint- and timing-compatible with industry standards with the added benefit of a chip-enable propagation delay of less than 10ns.

Power monitoring and switching for 3-volt battery-backup applications
Write-protect control
3-volt primary cell inputs
Less than 10ns chip-enable propagation delay
5% or 10% supply operation

Vin (max) (V)	5.5
Device type	Memory device
Operating temperature range (°C)	-40 to 85
Rating	Catalog
Communication interface	No interface
Operating current (typ) (µA)	3000